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| FGP20B thru FGP20D Vishay Semiconductors Glass Passivated Ultrafast Rectifier Major Ratings and Characteristics IF(AV) VRRM IFSM trr VF IR Tj max. 2.0 A 100 V to 200 V 50 A 35 ns 0.95 V 2.0 A 175 C (R) ed* tent Pa * Glass Encapsulation technique is covered by Patent No. 3,996,602, brazed-lead assembly to Patent No. 3,930,306 DO-204AC (DO-15) Features * * * * * * * * Cavity-free glass-passivated junction Ultrafast reverse recovery time Low forward voltage drop Low leakage current Low switching losses, high efficiency High forward surge capability Meets environmental standard MIL-S-19500 Solder Dip 260 C, 40 seconds Typical Applications Maximum Ratings TA = 25 C unless otherwise specified Parameter Maximum RMS voltage Maximum DC blocking voltage N ew For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, automotive and Telecommunication Pr od uc t Mechanical Data Symbol VRRM VRMS VDC IF(AV) IFSM TJ, TSTG FGP20B 100 70 100 FGP20C 150 105 150 2.0 50 - 65 to + 175 Case: DO-204AC, molded epoxy over glass body Epoxy meets UL-94V-0 Flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD22-B102D E3 suffix for commercial grade, HE3 suffix for high reliability grade (AEC Q101 qualified) Polarity: Color band denotes cathode end FGP20D 200 140 200 Unit V V V A A C Maximum repetitive peak reverse voltage Maximum average forward rectified current 0.375" (9.5 mm) lead length at TL = 75 C Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Operating junction and storage temperature range Document Number 88877 10-Aug-05 www.vishay.com 1 FGP20B thru FGP20D Vishay Semiconductors Electrical Characteristics TA = 25 C unless otherwise specified Parameter Maximum instantaneous forward voltage Maximum DC reverse current at rated DC blocking voltage Maximum reverse recovery time Typical junction capacitance Test condition at 2.0 A TA = 25 C TA = 100 C at IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A at 4.0 V, 1 MHz Symbol VF IR trr CJ FGP20B FGP20C 0.95 2.0 50 35 45 FGP20D Unit V A ns pF Thermal Characteristics TA = 25 C unless otherwise specified Parameter Typical thermal resistance Notes: (1) Thermal resistance from junction to ambient 0.375" (9.5 mm) lead length mounted on P.C.B. with 0.5 x 0.5" (12 x 12 mm) copper pads. (2) Thermal resistance from junction to lead at 0.375" (9.5 mm) lead length with both leads attached to heatsinks (1, 2) Symbol RJA RJL FGP20B FGP20C 60 20 FGP20D Unit C/W Ratings and Characteristics Curves (TA = 25 C unless otherwise specified) 3.0 60 Average Forward Rectified Current (A) Peak Forward Surge Current (A) 50 40 TJ = TJ max. 8.3 ms Single Half Sine-Wave 2.0 30 1.0 P.C.B. with 12 x 12 mm Copper Pads 0 0 25 50 75 100 125 150 175 20 10 0 1 10 100 Lead Temperature (C) Number of Cycles at 60 Hz Figure 1. Maximum Forward Current Derating Curve Figure 2. Maximum Non-Repetitive Peak Forward Surge Current www.vishay.com 2 Document Number 88877 10-Aug-05 FGP20B thru FGP20D Vishay Semiconductors 100 1000 Tj = 175 C Instantaneous Forward Current (A) 10 Tj = 150 C Junction Capacitance (pF) 1.4 100 1 Tj = 125 C 0.1 Tj = 25 C 0.01 0.2 0.4 0.6 0.8 1 1.2 TJ = 25 C Pulse Width = 300s 1% Duty Cycle 10 1 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Figure 5. Typical Junction Capacitance Instantantaneous Reverse Leakage Current (A) 100 Tj = 175 C 10 Tj = 150 C Tj = 125 C 1 0.1 0.01 Tj = 25 C 0.001 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Figure 4. Typical Reverse Leakage Characteristics Package outline dimensions in inches (millimeters) DO-204AC (DO-15) 0.034 (0.86) 0.028 (0.71) Dia. 1.0 (25.4) min. 0.300 (7.6) 0.230 (5.8) 0.140 (3.6) 0.104 (2.6) Dia. 1.0 (25.4) min. Document Number 88877 10-Aug-05 www.vishay.com 3 |
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